Method for manufacturing a uv-radiation detector device based on sic, and uv-radiation detector device based on sic

ABSTRACT

A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

BACKGROUND Technical Field

The present disclosure relates to a method for manufacturing aUV-radiation detector device and to a UV-radiation detector device. Inparticular, the present disclosure relates to a photodetector diode withanode terminal or cathode terminal that are transparent to the UVradiation to be detected.

Description of the Related Art

As is known, semiconductor materials that have a wide bandgap, inparticular, an energy value Eg of the bandgap higher than 1.1 eV, lowon-state resistance (R_(ON)), a high value of thermal conductivity, highoperating frequency and high speed of saturation of the charge carriersare ideal for producing electronic components, such as diodes ortransistors, in particular for power applications. A material havingthese characteristics, and designed for being used for manufacturingelectronic components, is silicon carbide (SiC). In particular, siliconcarbide, in its different polytypes (for example, 3C—SiC, 4H—SiC,6H—SiC), is preferable to silicon as regards the properties listedpreviously.

Electronic devices provided on a silicon-carbide substrate, as comparedto similar devices provided on a silicon substrate, present numerousadvantages, such as low output on-state resistance, low leakage current,high operating temperature and high operating frequencies. Inparticular, detection of ultraviolet (UV) radiation, for example comingfrom the Sun, from astronomic objects, or from artificial sources (inthe medical, military, environmental, and astronomical fields) hasreceived a considerable attention in the last few years. The manufactureof arrays of high-sensitivity diodes therefore present particularinterest. In this context, wide-band-gap materials are excellentcandidates for the detection of UV radiation; silicon carbide isconsequently particularly suited for the purpose. Among SiC polytypes,4H—SiC is preferable for detecting UV radiation, thanks to its wide bandgap (approximately 3.3 eV).

Schottky or PN photodiodes of a known type, for detection of UVradiation, are manufactured on a 4H—SiC epitaxial layer grown on aheavily doped substrate. Schottky contacts are provided on the front ofthe photodiode by formation of metal regions that provide the Schottkycontacts, while an ohmic contact is provided on the back of thephotodiode, for example by formation of a nickel layer followed by afast thermal annealing (at approximately 950-1000° C.). The Schottkycontacts on the front side are obtained by defining, by lithographicprocesses, structures of titanium or nickel-silicide that are typicallycomb-fingered. The geometry of Schottky contacts on the front side(front electrode) is chosen so as to enable direct exposure to theradiation to be detected and vertical-conduction electrical operation ofthe Schottky photodiode thus manufactured.

The area of the single diode directly exposed to UV radiation andelectro-optically active is limited by the presence of the frontSchottky contacts, which reflect and/or absorb the UV radiation andtherefore reduce the useful area effectively exposed.

FIG. 1 shows, in side cross-sectional view in a (triaxial) cartesianreference system of axes X, Y, Z, a vertical-conduction Schottky diode 1of a known type.

The Schottky diode 1 includes: a substrate 3 of heavily doped SiC of a Ntype (e.g., 1·10²⁰ atoms/cm³), provided with a surface 3 a opposite to asurface 3 b; a drift layer 2 of SiC grown epitaxially on the surface 3 aof the substrate 3, having a dopant concentration of an N type lowerthan the dopant concentration of the substrate 3; an ohmic-contactregion 6 (for example of nickel silicide), which extends over thesurface 3 b of the substrate 3; a cathode metallization 16, whichextends over the ohmic-contact region 6; and an anode metallization 8,which extends over a top surface 2 a of the drift layer 2.

Schottky contacts or junctions (of a semiconductor-metal type) areconsequently formed at the interface between the drift layer 2 and theanode metallization 8. In particular, Schottky junctions are formed byportions of the drift layer 2 in direct electrical contact withrespective portions of the anode metallization 8.

As has been said, a disadvantage of this device is the reduction of theactive area, i.e., of the area dedicated to generation of chargecarriers following upon interaction with the UV radiation to bedetected. In fact, the portions of the surface 2 a coated by the anodemetallization 8 do not participate in the detection of the UV radiationand subsequent generation of the charge carriers on account ofabsorption and/or reflection of the UV radiation itself to be detectedby the anode metallization 8.

BRIEF SUMMARY

The present disclosure is to provide a method for manufacturing aUV-radiation detector device, as well as a UV-radiation detector devicethat will be able to overcome the drawbacks of the prior art.

According to the present disclosure a method for manufacturing aUV-radiation detector device and a UV-radiation detector device areprovided. The present disclosure includes a method of manufacturing adetector device for detecting UV radiation by: forming, on a front sideof a silicon carbide (SiC) substrate that has a first conductivity and afirst concentration of dopant species, a drift layer of SiC having thefirst conductivity and a second concentration of dopant species lowerthan the first concentration; forming, on a back side of the substrate,a cathode terminal of the detector device; and forming, in the driftlayer, an anode terminal of the detector device. The forming the anodeterminal includes forming a doped anode region by implanting, in thedrift layer, dopant species having a second conductivity opposite to thefirst conductivity and forming a first ohmic-contact region includingone or more carbon-rich layers in said doped anode region with a laser.

The present disclosure also includes a device having a silicon carbidesubstrate having a first dopant type with a first dopant concentration,the silicon carbide substrate including a first surface opposite to asecond surface; a drift layer on the first surface of the siliconcarbide substrate, the drift layer having the first dopant type, thedrift layer having a first surface spaced from the first surface of thesilicon carbide substrate; an anode having a second dopant type in thedrift layer between the first surface of the drift layer and the firstsurface of the silicon carbide substrate; and a first ohmic-contact inthe anode between the first surface of the drift layer and the firstsurface of the silicon carbide substrate, the first ohmic-contactincluding carbon.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

For a better understanding of the present disclosure, preferredembodiments thereof are now described purely to way of non-limitingexample with reference to the attached drawings, wherein:

FIG. 1 is a cross-sectional view of a Schottky photodiode according to aknown embodiment;

FIG. 2 is a cross-sectional view of a UV-radiation detector deviceaccording to one embodiment of the present disclosure;

FIGS. 3-5 show steps for manufacturing the device of FIG. 2 , accordingto one embodiment of the present disclosure;

FIG. 6 illustrates measurements of transmittance of the devicemanufactured according to the present disclosure; and

FIG. 7 is a cross-sectional view of a UV-radiation detector deviceaccording to a further embodiment of the present disclosure.

DETAILED DESCRIPTION

FIG. 2 shows, in side cross-sectional view in a (triaxial) cartesianreference system of axes X, Y, Z, a device 50, in particular a devicefor detecting ultraviolet radiation (UV), in particular a PN diode,according to one aspect of the present disclosure. In this context, thedevice 50 is designed to detect radiation having a wavelength in the200-nm to 380-nm range.

The device 50 includes: a substrate 53, of SiC of an N type, having afirst dopant concentration, provided with a surface 53 a opposite to asurface 53 b, and having a thickness comprised between 50 μm and 350 μm,for example substantially equal to 180 μm; a drift layer (e.g., grownepitaxially) 52, of SiC of an N type, having a second dopantconcentration lower than the first dopant concentration, which extendsover the surface 53 a of the substrate 53 and has a thickness comprised,for example, between 5 and 100 inn; an ohmic-contact region or layer 56(for example, of nickel silicide), which extends over the surface 53 bof the substrate 53; a cathode metallization 57, for example ofTi/NiV/Ag or Ti/NiV/Au, which extends over the ohmic-contact region 56;an implanted anode region 59, which extends in the drift layer 52,facing the top surface 52 a of the drift layer 52, of a P type; and anohmic-contact layer 60, which extends in the implanted anode region 59and faces the top surface 52 a of the drift layer 52.

The doping level of the substrate 53 is, for example, comprised between1·10¹⁹ and 1·10²² atoms/cm³; the doping level of the drift layer 52 is,for example, comprised between 1·10¹³ and 5·10¹⁶ atoms/cm³; the dopinglevel of the implanted anode region 59 is, for example, equal to orhigher than to 1·10¹⁸ atoms/cm³.

According to one aspect of the present disclosure, the ohmic-contactlayer 60 includes one or more carbon-rich layers, which comprise, forexample, graphite layers, or graphene multi-layers. More in particular,the ohmic-contact layer 60 has, on the surface 52 a, an SiC amorphouslayer in which the carbon atoms are preponderant (for example, at leasttwice as many, in particular from twice to 100 times as many) ascompared to the silicon atoms, following upon a separation of phasebetween the silicon atoms and the carbon atoms of the SiC substrate.Underneath this amorphous layer, the ohmic-contact layer 60 may presenta layer including carbon clusters (e.g., graphite layer), having athickness greater than that of the amorphous layer. Formation of thisohmic-contact layer 60 is due to a thermal decomposition of siliconcarbide, as a result of the manufacturing process illustrated in whatfollows.

According to a further aspect of the present disclosure, theohmic-contact layer 60 is self-aligned, on the surface 52 a, with theimplanted region 59 (i.e., in top view in the plane XY, theohmic-contact layer 60 has the same shape and extension as the implantedregion 59).

In addition, according to a further aspect of the present disclosure,the ohmic-contact layer 60 does not extend, along Z, beyond the surface52 a; in other words, the ohmic-contact layer 60 has a top surface 60 acoplanar (i.e., aligned along X) with the surface 52 a, and extends indepth (along Z) in the implanted region 59 for a depth comprised betweenone nanometer and some tens of nanometers (e.g., between 1 and 20 nm)measured starting from the surface 52 a.

The shape in plan view, or “layout”, of the implanted region 59 (andtherefore of the ohmic-contact layer 60) in the plane XY can be chosenaccording to the need, in the design stage. In particular, the implantedregion 59 can extend continuously (in top view in the plane XY) over theentire active area of the device 50, or else only over a portion of theactive area of the device 50, or else may be formed by a plurality ofimplanted sub-regions separated from one another by portions of thedrift layer 52.

The present applicant has found that an ohmic-contact layer 60 of thetype described previously is transparent to UV radiation, in particularto radiation with a wavelength in the 200-nm to 380-nm range. Therefore,in use, even in the case where the ohmic-contact layer 60 were to coverthe entire active area of the device 50, the UV radiation to be detectedwould traverse in any case the ohmic-contact layer 60, reaching thedrift layer 52 and generating, in a per se known manner, the chargecarriers. By appropriately polarizing the device 50 between the anodeand the cathode (e.g., by bonding wires) it is thus possible to collectand measure a current induced by the UV radiation, in a way in itselfknown that does not form part of the present disclosure.

Steps of formation of the device 50 are described in what follows, onlywith reference to the steps of formation of the ohmic-contact layer 60(the remaining steps are carried out according to the prior art).

With reference to FIG. 3 , a wafer 100 is arranged, including thesubstrate 53 of SiC (in particular, 4H—SiC; however, other polytypes maybe used such as, though not exclusively, 2H—SiC, 3C—SiC and 6H—SiC).

As has been said, the substrate 53 has a first conductivity type (inthis embodiment a doping of an N type) and is provided with the frontsurface 53 a and the back surface 53 b, which are opposite to oneanother along the axis Z. The substrate 53 has a dopant concentrationcomprised between 1·10¹⁹ and 1·10²² atoms/cm³.

The front of the wafer 100 corresponds to the front surface 53 a, andthe back of the wafer 100 corresponds to the back surface 53 b. Theresistivity of the substrate 30 is, for example, comprised between 2mΩ·cm and 40 mΩ·cm.

Formed on the front surface 53 a of the substrate 53, for example byepitaxial growth, is the drift layer 52 of silicon carbide having thefirst conductivity type (N) and having a dopant concentration lower thanthat of the substrate 53, for example comprised between 1·10¹³ and5·10¹⁶ atoms/cm³. The drift layer 52 is of SiC, in particular 4H—SiC,but it is possible to use other SiC polytypes, such as 2H, 6H, 3C or15R.

The drift layer 52 has a thickness defined between a top side 52 a and abottom side 52 b (the latter being in direct contact with the frontsurface 53 a of the substrate 53).

Then (FIG. 4 ), an implantation is performed of dopant species (forexample, boron or aluminum), which have the second conductivity type(here, a P conductivity). The implantation (indicated in the figures byarrows 72) can be carried out with or without implantation mask,according to the design requirements, as mentioned previously. In theabsence of an implantation mask, an implanted region extends throughoutthe extension of the plane XY of a cartesian reference system, asindicated in the figures, of the drift layer 52 and along Z for a depththat depends upon the energy of the implantation itself; in the presenceof implantation mask, one or more implanted regions extend where theimplantation mask is transparent to the implantation.

In an embodiment provided by way of example, the implantation step ofFIG. 4 comprises one or more implantations of dopant species, which havethe second conductivity type, with implantation energy comprised between30 keV and 500 keV, and with doses of between 1·10¹² atoms/cm² and1·10¹⁵ atoms/cm². A subsequent thermal annealing enables activation ofthe dopants thus implanted and form the implanted anode region 59 with adopant concentration of higher than 1·10¹⁸ atoms/cm³ and depth, measuredstarting from the surface 52 a, comprised between 0.3 μm and 1 μm.

Next (FIG. 5 ), generated on the surface 52 a is a thermal budgetdesigned to favor generation, in the implanted region 59, of theaforementioned one or more carbon-rich layers (for example, grapheneand/or graphite layers).

For this purpose, a laser source 80 is used, configured to generate anappropriate beam 82.

The laser 80 is, for example, a UV excimer laser. Other types of lasermay be used, amongst which lasers with a wavelength in the region of thevisible.

The configuration and operating parameters of the laser 80, optimizedfor achieving the purpose of the present disclosure, i.e., for enablingformation of an ohmic contact in the implanted region 59, are thefollowing:

-   -   wavelength: between 290 and 370 nm, in particular 310 nm;    -   pulse duration: between 100 ns and 300 ns, in particular 160 ns;    -   number of pulses (scans): between 1 and 5;    -   energy density: between 1.5 J/cm² and 4 J/cm², in particular 3        J/cm² (considered at the level of the surface 52 a); and    -   temperature: between 1400° C. and 2600° C., in particular        1800° C. (considered at the level of the surface 52 a).

The area of the spot of the beam 82 at the level of the surface 52 a is,for example, comprised between 0.7 and 1.5 cm².

In order to cover the entire wafer 100, or the sub-region of the wafer100 to be heated, one or more scans of the laser 80 are thereforeperformed in the plane XY (e.g., a plurality of scans parallel to oneanother and to the axis X and/or axis Y).

Given the depth of the implanted region 59, a temperature ofapproximately 2000° C. at the level of the surface 52 a is sufficient toguarantee temperatures within the range identified above also at themaximum depth reached by the implanted region 59 (e.g., 1 μm) so as toguarantee activation of all the dopant without the need to carry out adedicated thermal budget.

This temperature is such as to favor generation of compounds of thecarbon-rich ohmic contacts exclusively in the implanted region 59, andnot at the surface 52 a without the implanted region 59. This effect, ofa type in itself known, is described, for example, by Maxime G.Lemaitre, “Low-temperature, site selective graphitization of SiC via ionimplantation and pulsed laser annealing”, APPLIED PHYSICS LETTERS 100,193105 (2012).

In one embodiment, transformation of part of the implanted region 59into the ohmic-contact layer 60 is obtained by heating the entire wafer100, appropriately moving the laser 80. With an energy density of thebeam 82 comprised between 1.5 and 3 J/cm², the localized and surfaceincrease of the temperature causes formation of the ohmic-contact layer60. Where the implanted region 59 is not present, this effect is notobserved.

In a different embodiment, transformation of the surface portion of theimplanted region 59 into the ohmic-contact layer 60 is obtained bytreating only a part of the wafer 100, which might not correspond to theentire extension of the implanted region 59 (for example, excludingpossible portions that are not of interest during use of the device 50as UV detector in so far as they do not take part in generation andtransport of electric charge).

In a further embodiment, it is possible to arrange on the surface 52 a(either in contact with the surface 52 a or at a distance therefrom) amask having one or more regions transparent to the beam 82 (i.e., thebeam 82 traverses them) and regions opaque to the beam 82 (i.e., thebeam 82 does not traverse them, or traverses them in attenuated formsuch as not to heat significantly the portions of the wafer 100 thatextend underneath it). The transparent regions of the mask that arealigned to the implanted region 59 (or to respective implanted regions)enable formation of the respective ohmic-contact layer 60. Possibleregions of the drift layer 52 without the P implantation are covered andprotected by the mask. In this case, the energy density of the beam 82can be increased up to 4.5 J/cm² or more. In fact, to generate an ohmiccontact in doped regions during epitaxial growth, an energy density ofthe laser beam is required higher than the one required for generationof an ohmic contact in doped regions through the ion-implantationprocess (in particular, higher than approximately 3 J/cm²).

In this embodiment, since a mask is present that exposes only theimplanted regions 59, it is possible to use energy densities of higherthan 3 J/cm², without the risk of forming an ohmic contact on regions ofan N type of the drift layer 52.

The step of thermal annealing for activation of the dopants of theimplanted region 59 may, in one embodiment, coincide with the step offormation of the ohmic-contact layer 60 in so far as the temperaturereached by the laser beam 82 is such as to activate the dopants.Alternatively, it is in any case possible to carry out traditionalthermal annealing prior to formation of the ohmic-contact layer 60.

Transformation of the SiC of a P type into the ohmic contact occurs attemperatures comprised between 1200° C. and 2600° C., more in particulartemperatures higher than of 1600° C. These temperatures are reached in asurface portion (some nanometers, e.g., 1-20 nm) of the implanted region59.

For greater depths, the temperature drops to values such as not to causeany longer transformation of silicon carbide into carbon-rich layers(graphene and/or graphite layers).

Formation of the ohmic contact is therefore self-limited. Consequently,the ohmic-contact layer 60 does not extend throughout the thickness ofthe respective implanted region, but exclusively at the surface levelthereof. The ohmic-contact layer 60 is formed within the implantedregion 59 such that a top surface of the implanted region 59 is coplanaror otherwise coinciding with a top surface of the ohmic-contact layer60.

The present applicant has found that, with the parameters of laserconfiguration and operation identified previously, the desiredelectrical and optical behavior for the device 50 is obtained. FIG. 6illustrates, in this regard, experimental data of transmittance afterformation of the ohmic-contact layer 60 and exposure of the device 50 toUV radiation at various wavelengths; the behavior is as expected and iscomparable with that of a traditional UV detector.

FIG. 7 illustrates a UV detector device 150 according to a furtheraspect of the present disclosure.

Elements of the device 150 common to the device 50 of FIG. 2 aredesignated by the same reference numbers and are not described anyfurther.

Unlike the device 50, the device 150 does not have the ohmic-contactlayer 56 of nickel silicide and the cathode metallization 57. Instead,the device 150 includes an ohmic-contact layer 156, which extends overthe surface 53 b of the substrate 53. The ohmic-contact layer 156 issimilar to the ohmic-contact layer 60 (in particular, it can include oneor more carbon-rich layers, for example graphite layers or graphenemulti-layers) and is transparent to the UV radiation to be detected(e.g., with a wavelength in the range from 200 nm to 380 nm).

Formation of the ohmic-contact layer 156 includes a laser treatment(similar to what has been discussed previously for formation of theohmic-contact layer 60).

Optimization of the ohmic properties of the contact 156 at the back ofthe substrate 53 (having an N doping) requires an energy density of thebeam 82 different from the energy required for optimization of the ohmicproperties of the layer 60 in the implanted region (having a P doping).In fact, as has been said, to generate an ohmic contact on the substratehaving an N doping an energy density of the laser beam is requiredgreater than that required for generation of an ohmic contact in a dopedregion P via the implantation process. For this purpose, it is possibleto regulate operating parameters of the laser 80 to generate beams withdifferent characteristics according to the ohmic-contact layer 60 or 156that it is desired to form, each beam being designed for generating therespective layer with ohmic properties.

It is consequently also possible to use the laser 80, with the followingconfiguration and operating parameters, to form the ohmic contact 156 atthe back 53 b of the substrate 53, namely:

-   -   wavelength: between 290 and 370 nm, in particular 310 nm;    -   pulse duration: between 100 ns and 300 ns, in particular 160 ns;    -   number of pulses (scans): between 1 and 5;    -   energy density: between 3 and 4.5 J/cm², in particular between        3.2 J/cm² and 4.5 J/cm²; and    -   temperature: between 1400° C. and 2600° C., in particular higher        than 1800° C. (considered at the level of the surface 53 b).

In this way a UV detector is obtained capable of receiving the UVradiation from both sides (front and back).

From an examination of the characteristics of the disclosure providedaccording to the present disclosure the advantages that it affords areevident.

In particular, the response of the detector is maximized thanks to thepossibility of exploiting, by photodetection, all the surface availableirrespective of the presence of the electrical contacts (which,according to the disclosure, as has been said, are transparent to the UVradiation to be detected).

In addition, the manufacturing process flow is simplified as compared tothe prior art.

Moreover, the present disclosure makes it possible to provide a UVdetector designed to detect radiation that impinges upon both surfaces(front and back), which can be used, for example, to manufacture windowsof space stations and/or buildings, spectacles, etc.

Furthermore, according to the present disclosure, the possibility isprovided of modulating the shape and dimensions of the area that detectsthe UV radiation by directing the laser beam according to the need,i.e., without the use of photomasking techniques.

Finally, it is clear that modifications and variations may be made towhat has been described and illustrated herein, without with therebydeparting from the scope of the present disclosure, as defined in theannexed claims.

A method for manufacturing a detector device (50; 150) for detecting UVradiation, may be summarized as including the steps of providing a SiCsubstrate (53) having a first conductivity (N) and a first concentrationof dopant species, provided with a front side (53 a) and a back side (53b) opposite to one another; forming, on the front side (53 a) of thesubstrate (53), a drift layer (52) of SiC having the first conductivity(N) and a second concentration of dopant species lower than the firstconcentration; forming, on the back side of the substrate (53), acathode terminal of said detector device (50); and forming, in the driftlayer (52), an anode terminal of said detector device (50; 150),characterized in that the step of forming the anode terminal comprisesimplanting, in the drift layer (52), dopant species having a secondconductivity (P) opposite to the first conductivity (N), thus forming adoped anode region (59); and generating a first laser beam (82) towardssaid doped anode region (59) to cause heating of the doped anode region(59) to temperatures comprised between 1500° C. and 2600° C., so as toform a first ohmic-contact region (60) including one or more carbon-richlayers, in particular layers of graphene and/or graphite, in said dopedanode region (59).

The doped anode region (59) may extend in depth in the drift layer (52)starting from a top surface (52 a) of the drift layer (52), and whereinsaid first ohmic-contact region (60) has a top surface thereofcoinciding with said top surface (52 a) of the drift layer (52).

Heating of the doped anode region (59) by the first laser beam (82) maycause activation of the dopant species having the second conductivity(P) of the doped anode region (59).

Said first laser beam (82) may be generated according to the followingparameters: wavelength between 290 nm and 370 nm; pulse duration between100 and 300 ns; and energy density between 1.5 and 4.5 J/cm2.

Forming the first ohmic-contact region (60) may include forming said oneor more carbon-rich layers exclusively within the doped anode region(59).

Said first ohmic-contact region (60) may extend in the doped anoderegion (59) for a depth comprised between 1 nm and 20 nm.

The step of forming the cathode terminal may include generating a secondlaser beam towards the back side (53 b) of the substrate (53) in orderto cause heating of the substrate (53) to temperatures between 1500° C.and 2600° C., so as to form a second ohmic-contact region (156)including one or more carbon-rich layers, in particular layers ofgraphene and/or graphite, on said back side (53 b) of the substrate(53).

Said second laser beam may be generated according to the followingparameters wavelength: between 290 nm and 370 nm; pulse duration between100 and 300 ns; and energy density between 3 and 4.5 J/cm2.

A detector device (50; 150) for detecting UV radiation may be summarizedas including a SiC substrate (53) having a first conductivity (N) and afirst concentration of dopant species, provided with a front side (53 a)and a back side (53 b) opposite to one another; a SiC drift layer (52),which extends over the front side (53 a) of the substrate (53), havingthe first conductivity (N) and a second concentration of dopant specieslower than the first concentration; a cathode terminal on the back sideof the substrate (53); and an anode terminal in the drift layer (52),characterized in that the anode terminal comprises a doped anode region(59) in the drift layer (52), including dopant species having a secondconductivity (P) opposite to the first conductivity (N); a firstohmic-contact region (60) including one or more carbon-rich layers, inparticular graphene and/or graphite layers, which extends in said dopedanode region (59).

The doped anode region (59) may extend in depth in the drift layer (52)starting from a top surface (52 a) of the drift layer (52), and whereinsaid first ohmic-contact region (60) has a top surface thereofcoinciding with said top surface (52 a) of the drift layer (52).

The first ohmic-contact region (60) may include said one or morecarbon-rich layers exclusively within the doped anode region (59).

Said first ohmic-contact region (60) may extend in the doped anoderegion (59) for a depth comprised between 1 nm and 20 nm.

Said substrate (53) may be of 4H—SiC.

The cathode terminal may include a second ohmic-contact region (156)including one or more carbon-rich layers, in particular graphene and/orgraphite layers, which extends in said doped anode region (59).

The second ohmic-contact region (156) may have a surface thereofcoinciding with the back side (53 b) of the substrate (53).

The various embodiments described above can be combined to providefurther embodiments. Aspects of the embodiments can be modified, ifnecessary to employ concepts of the various patents, applications andpublications to provide yet further embodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. A method, comprising: manufacturing a detector device for detectingUV radiation by: forming, on a front side of a silicon carbide (SiC)substrate that has a first conductivity and a first concentration ofdopant species, a drift layer of SiC having the first conductivity and asecond concentration of dopant species lower than the firstconcentration; forming, on a back side of the substrate, a cathodeterminal of the detector device; and forming, in the drift layer, ananode terminal of the detector device, the forming the anode terminalincludes: forming a doped anode region by implanting, in the driftlayer, dopant species having a second conductivity opposite to the firstconductivity; and forming a first ohmic-contact region including one ormore carbon-rich layers in said doped anode region with a laser.
 2. Themethod according to claim 1, wherein the doped anode region extends indepth in the drift layer starting from a top surface of the drift layer,and the first ohmic-contact region has a top surface coinciding with thetop surface of the drift layer.
 3. The method according to claim 1,wherein forming the first ohmic-contact region includes heating of thedoped anode region to temperatures in the range of 1500° C. and 2600° C.by generating a first laser beam with the laser towards the doped anoderegion and causing activation of the dopant species having the secondconductivity of the doped anode region.
 4. The method according to claim3, wherein generating the first laser beam includes: utilizing awavelength in the range of 290 nm and 370 nm; utilizing a pulse durationin the range of 100 and 300 ns; and utilizing an energy density in therange of 1.5 and 4.5 J/cm².
 5. The method according to claim 1, whereinforming the first ohmic-contact region comprises forming the one or morecarbon-rich layers exclusively within the doped anode region.
 6. Themethod according to claim 1, wherein the first ohmic-contact regionextends in the doped anode region for a depth in the range of 1 nm and20 nm.
 7. The method according to claim 3, wherein forming the cathodeterminal comprises forming a second ohmic-contact region including oneor more carbon-rich layers on the back side of the substrate bygenerating a second laser beam towards the back side of the substrate,heating of the substrate to temperatures in the range of 1500° C. and2600° C.
 8. The method according to claim 7, wherein generating thesecond laser beam includes: utilizing a wavelength in the range of 290nm and 370 nm; utilizing a pulse duration in the range of 100 and 300ns; and utilizing an energy density in the range of 3 and 4.5 J/cm². 9.A method, comprising: forming a UV detector device that includes asilicon carbide (SiC) substrate having a first conductivity and a firstconcentration of dopant species, with a front side and a back sideopposite to one another; forming a SiC drift layer on the front side ofthe substrate, the SiC draft layer having the first conductivity and asecond concentration of dopant species lower than the firstconcentration; forming an anode terminal in the SiC drift layer, whereinforming the anode terminal includes: forming a doped anode region in thedrift layer, including dopant species having a second conductivityopposite to the first conductivity; and forming a first ohmic-contactregion including one or more carbon-rich layers in the doped anoderegion.
 10. The method according to claim 9, comprising forming the oneor more carbon-rich layers exclusively within the doped anode region.11. The method according to claim 9, comprising forming a cathodeterminal that includes a second ohmic-contact region including one ormore carbon-rich layers, extending in the doped anode region.
 12. Amethod, comprising: forming a UV radiation detector device by: formingon a first side of a silicon carbide (SiC) substrate a drift layerhaving a first conductivity and a first concentration of dopant species,the SiC substrate has the first conductivity a second concentration ofdopant species greater than the first concentration; forming, in thedrift layer, an anode terminal of the detector device, the forming theanode terminal includes: forming a doped anode region, in the driftlayer, dopant species having a second conductivity opposite to the firstconductivity; and forming a first ohmic-contact region including acarbon-rich layer in the doped anode region with a laser.
 13. The methodof claim 12, wherein the drift layer is silicon carbide.
 14. The methodof claim 12, wherein the doped anode region extends in depth in thedrift layer starting from a top surface of the drift layer and the firstohmic-contact region has a top surface coinciding with the top surfaceof the drift layer.
 15. The method of claim 12, wherein forming thefirst ohmic-contact region includes heating the doped anode region totemperatures in the range of 1500° C. and 2600° C. by generating a firstlaser beam to the doped anode region and causing activation of thedopant species having the second conductivity of the doped anode region.16. The method of claim 15, wherein generating the first laser beamincludes: utilizing a wavelength in the range of 290 nm and 370 nm;utilizing a pulse duration in the range of 100 and 300 ns; and utilizingan energy density in the range of 1.5 and 4.5 J/cm².
 17. The method ofclaim 12, wherein forming the first ohmic-contact region comprisesforming the carbon-rich layer exclusively within the doped anode region.18. The method of claim 12, wherein the first ohmic-contact regionextends in the doped anode region for a depth in the range of 1 nm and20 nm.